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MRF8P26080HR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P26080HR5
  
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RF Power Field Effect Transistors.  N-Channel Enhancement-Mode Lateral MOSFETs.  Designed for W-CDMA and LTE base station applications with frequencies from 2500 to 2700 MHz.  Can be used in Class AB and Class C for all typical cellular base station modulation formats.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2500 MHz
Frequency Range : Maximum Frequency2700 MHz
P1dB54 W
P3dB83 W
Gain15 dB
Pout14 W
Test signalW-CDMA
Efficiency36.9 %
Supply Voltage28 VDC
Thermal Resistance0.88 °C/W
Package NameNI-780
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS