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MRF8S8260HR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S8260HR5
  
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RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 790 to 895 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency850 MHz
Frequency Range : Maximum Frequency895 MHz
P1dB260 W
P3dB
Gain21.1 dB
Pout70 W
Test signalW-CDMA
Efficiency37.5 %
Supply Voltage28 VDC
Thermal Resistance0.36 °C/W
Package NameNI-880
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS