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MRF8P29300HR6 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P29300HR6
  
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RF Power Field Effect Transistors. N--Channel Enhancement--Mode Lateral MOSFETs.  RF Power transistors designed for applications operating at frequencies between 2700 and 2900 MHz. These devices are suitable for use in pulsed applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2700 MHz
Frequency Range : Maximum Frequency2900 MHz
P1dB320 W
P3dB
Gain13.3 dB
Pout320 W
Test signalPulsed
Efficiency50.5 %
Supply Voltage30 VDC
Thermal Resistance0.06 °C/W
Package NameNI-1230
Package Type
Availability
389
Manufacturer Stock
900
QuantityUnit Price
1 - 9
$365.75
10 - 24
$347.69
25 - 149
$331.33
150+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS