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MRF8S9102NR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S9102NR3
  
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RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency865 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB100 W
P3dB
Gain23.1 dB
Pout28 W
Test signalW-CDMA
Efficiency36.4 %
Supply Voltage28 VDC
Thermal Resistance0.63 °C/W
Package NameOM-780
Package Type
Availability
1821
Manufacturer Stock
6750
QuantityUnit Price
1 - 9
$48.71
10 - 24
$46.31
25 - 249
$44.13
250+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS