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MRF8P20165WHSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P20165WHSR3
  
RF Power Field Effect Transistors N-Channel Enhancement--Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1930 MHz
Frequency Range : Maximum Frequency1995 MHz
P1dB104 W
P3dB190 W
Gain16.3 dB
Pout37 W
Test signalW-CDMA
Efficiency47.7 %
Supply Voltage28 VDC
Thermal Resistance0.79 °C/W
Package NameNI-780
Package Type
Availability
100
Manufacturer Stock
500
QuantityUnit Price
1 - 9
$104.51
10 - 24
$99.35
25 - 249
$94.67
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS