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MRF8P20165WHSR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P20165WHSR5
    
RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 1880 to 2025 MHz.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1930 MHz
Frequency Range : Maximum Frequency1995 MHz
P1dB104 W
P3dB190 W
Gain16.3 dB
Pout37 W
Test signalW-CDMA
Efficiency47.7 %
Supply Voltage28 VDC
Thermal Resistance0.79 °C/W
Package NameNI-780
Package Type
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NXP SEMICONDUCTORS