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MRF8P20140WHSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P20140WHSR3
  
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1880 MHz
Frequency Range : Maximum Frequency2025 MHz
P1dB140 W
P3dB170 W
Gain16 dB
Pout24 W
Test signalW-CDMA
Efficiency43.7 %
Supply Voltage28 VDC
Thermal Resistance0.68 °C/W
Package NameNI-780S-4L
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$90.10
10 - 24
$85.65
25 - 249
$81.62
250+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS