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MRF8HP21130HR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8HP21130HR3
    
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs.  Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB130 W
P3dB166 W
Gain14 dB
Pout28 W
Test signalW-CDMA
Efficiency45.1 %
Supply Voltage28 VDC
Thermal Resistance0.6 °C/W
Package NameNI-780-4
Package Type
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This product is available in the following countries:
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NXP SEMICONDUCTORS