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MRF8S21172HR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S21172HR3
  
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RF Power Field Effect Transistors.  N-Channel Enhancement-Mode Lateral MOSFETs.  Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.  Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB132 W
P3dB
Gain17.5 dB
Pout42 W
Test signalW-CDMA
Efficiency30.6 %
Supply Voltage28 VDC
Thermal Resistance0.41 °C/W
Package NameNI-780
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS