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2731GN-110 Microsemi
RF Power Transistor
The 2731GN-110M in an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 110 Watts of pulsed RF output power at 200µs pulse width, 10% duty factor across the 2700 to 3100 MHz band.  The transistor has internal pre-match for optimal performance.  This hermetically sealed transistor is designed for S-Band Radar applications.  It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency2700 MHz
Frequency Range : Maximum Frequency3100 MHz
P1dB
P3dB
Gain12 dB
Pout125 W
Test signalPulsed
Efficiency50 %
Supply Voltage60 VDC
Thermal Resistance1.1 °C/W
Package Name55QP
Package Type
Availability
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$382.89
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This product is available in the following countries:
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MICROSEMI