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MRF8HP21080HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8HP21080HSR3
  
LDMOS RF Power Transistors; advanced high performance in-package Doherty configuration. N-Channel Enhancement-Mode Lateral MOSFETs.  Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz.  Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB60 W
P3dB100 W
Gain14.4 dB
Pout16 W
Test signalW-CDMA
Efficiency45.7 %
Supply Voltage28 VDC
Thermal Resistance1 °C/W
Package NameNI-780S
Package Type
Availability
112
Manufacturer Stock
1250
QuantityUnit Price
1 - 9
$48.53
10 - 24
$46.14
25 - 249
$43.96
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS