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MRF8P8300HSR6 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P8300HSR6
  
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RF Power Field Effect Transistors.  N--Channel Enhancement--Mode Lateral MOSFETs.  Designed for W--CDMA and LTE base station applications with frequencies from 790 to 820 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency790 MHz
Frequency Range : Maximum Frequency820 MHz
P1dB340 W
P3dB
Gain20.9 dB
Pout96 W
Test signalW-CDMA
Efficiency35.7 %
Supply Voltage28 VDC
Thermal Resistance0.26 °C/W
Package NameNI-1230
Package Type
Availability
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QuantityUnit Price
1 - 9
$138.19
10 - 24
$131.37
25 - 149
$125.19
150+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS