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MMA20312BVT1 NXP Semiconductors
RF & MW Power Amplifier
MFG Part Number: MMA20312BVT1
  
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier.  The MMA20312BV is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femto cell or repeater applications.  It is suitable for applications with frequencies from 1800 to 2200 MHz such as CDMA, TD-SCDMA, PCS, UMTS and LTE at operating voltages from 3.3 to 5 Volts.  The amplifier is housed in a low-cost, surface mount QFN plastic package.
 
Key AttributesValue
TechnologyInGaP
Frequency Range : Minimum Frequency1800 MHz
Frequency Range : Maximum Frequency2200 MHz
Gain27.2 dB
Gain Flatness
Efficiency9.3 %
Supply Voltage5 VDC
P1dB28.2 dBm
Psat
Package TypeQFN
Availability
2109
Manufacturer Stock
52793
QuantityUnit Price
1 - 9
$3.86
10 - 24
$3.75
25 - 99
$3.51
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS