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CHA6250-QFG/20 United Monolithic Semiconductors
RF & MW Power Amplifier
MFG Part Number: CHA6250-QFG
QFN Packaged 6-9 GHz High Power Amplifier.  GaAs Monolithic Microwave IC.  UMS is offering a packaged 6-9 GHz High Power Amplifier.  The 3-stages amplifier typically exhibits 33.5 dBm of output power at 1dB gain compression with an overall DC consumption of 0.9A at 7V.  The high 23.5dB gain associated with the high linearity of 43 dBm make of this circuit a very versatile part for high performance systems, notably, point to point telecommunication systems.  The circuit is dedicated to telecommunication and also well suited for a wide range of microwave and millimeter wave applications and systems.  It is developed on a robust 0.5µm gate length pHEMT process, and will be available in standard surface mount 32 leads QFN5x5 package (QFG), compliant with the European directives in particular REACh Nº 1907/2006 and ROHS Nº 2111/65.
Key AttributesValue
Frequency Range : Minimum Frequency5500 MHz
Frequency Range : Maximum Frequency9000 MHz
Gain23.5 dB
Gain Flatness
Supply Voltage7 VDC
P1dB33.5 dBm
Package TypeSurface Mount
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