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NE3503M04-T2B-A Renesas
RF Small Signal Transistor HFET
MFG Part Number: NE3503M04-T2B-A
    

HETERO JUNCTION FIELD EFFECT TRANSISTOR.  C to Ku band super low noise and high-gain amplifier N-Channel HJ-FET.

 
Key AttributesValue
Frequency Range : Minimum Frequency
Frequency Range : Maximum Frequency
Gain
Noise Figure
P1dB
Output IP3
Vd (Device Voltage)
Idss
Thermal Resistance
Package Type
Availability
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This product is available in the following countries:
  • Europe

   
RENESAS