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MRFE6VP61K25HS6 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6VP61K25HSR6
  
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RF Power Field Effect Transistors.  High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs.  These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace an
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1.8 MHz
Frequency Range : Maximum Frequency600 MHz
P1dB1250 W
P3dB
Gain22.9 dB
Pout1500 W
Test signalCW
Efficiency74.6 %
Supply Voltage50 VDC
Thermal Resistance0.15 °C/W
Package NameNI-1230
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS