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MMZ09312BT1 NXP Semiconductors
RF & MW Power Amplifier
MFG Part Number: MMZ09312BT1
  
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier.  The MMZ09312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or repeater applications.  it is suitable for applications with frequencies from 400 to 1000 MHz such as CDMA, GSM, LTE and ZigBee® at operating voltages from 3 to 5 Volts.  The amplifier is housed in a cost-effective, surface mount QFN plastic package.
 
Key AttributesValue
TechnologyInGaP
Frequency Range : Minimum Frequency400 MHz
Frequency Range : Maximum Frequency1000 MHz
Gain31.5 dB
Gain Flatness
Efficiency
Supply Voltage5 VDC
P1dB29.6 dBm
Psat
Package TypeQFN
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$3.58
10 - 24
$3.48
25 - 99
$3.25
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS