DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
MRF8P23160WHR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P23160WHR3
    
Enlarge Photo
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for base station applications with wide instantaneous bandwidth requirements covering frequencies from 2300 to 2400 MHz.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2300 MHz
Frequency Range : Maximum Frequency2400 MHz
P1dB150 W
P3dB
Gain14.1 dB
Pout3 W
Test signalW-CDMA
Efficiency36.5 %
Supply Voltage28 VDC
Thermal Resistance0.69 °C/W
Package NameNI-780
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$100.16
10+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS