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MAGX-000025-150 M/A-COM Technology Solutions
RF Power Transistor
    
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GaN on SiC HEMT Power Transistor 150 W, 1-2500 MHz. The MAGX-000025-150000 is a gold-metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over a wide bandwidth for today’s demanding application needs. High breakdown voltages allow for reliable and stable operation under more extreme mismatch load conditions compared with older semiconductor technologies.
 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency1 MHz
Frequency Range : Maximum Frequency2500 MHz
P1dB
P3dB
Gain18 dB
Pout150 W
Test signalPulsed
Efficiency58 %
Supply Voltage50 VDC
Thermal Resistance0.65 °C/W
Package Name
Package TypeCeramic Flanged
Availability
25
QuantityUnit Price
1 - 9
$490.23
10 - 24
$465.71
25+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
M/A-COM TECHNOLOGY SOLUTIONS