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2730GN-100L Microsemi
RF Power Transistor
MFG Part Number: 2730GN-100L
  

100 Watts, 3 mS , 30%, +55 Volts.  2700 - 3000 MHz.  The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF output power at 3mS pulse width, 30% duty factor across the 2700 to 3000 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is designed for S-Band Radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Pulse Definition of: 3mS pulse width, 30% Duty factor.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency2700 MHz
Frequency Range : Maximum Frequency3000 MHz
P1dB
P3dB
Gain12 dB
Pout120 W
Test signalPulsed
Efficiency55 %
Supply Voltage55 VDC
Thermal Resistance0.8 °C/W
Package Name55QP
Package Type
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This product is available in the following countries:
  • Global
   
MICROSEMI