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2729GN-500 Microsemi
RF Power Transistor
MFG Part Number: 2729GN-500
  

The 2729GN-500 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 12dB gain, 500 Watts of pulsed RF output power at 100μs pulse width, 10% duty factor across the 2700 to 2900 MHz band. The transistor has internal pre-match for optimal performance. This hermetically sealed transistor is specifically designed for Sband radar applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency2700 MHz
Frequency Range : Maximum Frequency2900 MHz
P1dB
P3dB520 W
Gain12.16 dB
Pout
Test signalPulsed
Efficiency53 %
Supply Voltage65 VDC
Thermal Resistance0.2 °C/W
Package Name55KR
Package Type
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This product is available in the following countries:
  • Global
   
MICROSEMI