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1214GN-500 Microsemi
RF Power Transistor
MFG Part Number: 1214GN-500
  
The 1214GN-500 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 500 Watts of pulsed RF output power at 300μs pulse width, 10% duty factor across the 1200 to 1400 MHz band.
 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency1200 MHz
Frequency Range : Maximum Frequency1400 MHz
P1dB
P3dB550 W
Gain18.5 dB
Pout
Test signalPulsed
Efficiency55 %
Supply Voltage60 VDC
Thermal Resistance0.16 °C/W
Package Name55KR
Package Type
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This product is available in the following countries:
  • Global
   
MICROSEMI