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0912GN-600 Microsemi
RF Power Transistor
MFG Part Number: 0912GN-600
  
The 0912GN-600 is an internally matched, COMMON SOURCE, class AB, GaN on SiC HEMT transistor capable of providing over 18dB gain, 600 Watts of pulsed RF output power at 128μs pulse width, 10% duty factor across the 960 to 1215 MHz band.
 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency960 MHz
Frequency Range : Maximum Frequency1215 MHz
P1dB
P3dB640 W
Gain19 dB
Pout
Test signalPulsed
Efficiency55 %
Supply Voltage65 VDC
Thermal Resistance0.2 °C/W
Package Name55KR
Package Type
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This product is available in the following countries:
  • Global
   
MICROSEMI