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2731GN-200M Microsemi
RF Power Transistor
  
The 2731GN-200M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 12dB gain, 200 Watts of pulsed output power at 200µs pulse width, 10% duty factor across teh 2700 to 3100 MHz band.
 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency2700 MHz
Frequency Range : Maximum Frequency3100 MHz
P1dB
P3dB
Gain12.7 dB
Pout225 W
Test signalPulsed
Efficiency50 %
Supply Voltage60 VDC
Thermal Resistance0.6 °C/W
Package Name55QP
Package Type
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This product is available in the following countries:
  • Global
   
MICROSEMI