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C2M0080120D Cree, Inc.
Silicon Carbide Power Transistors/Modules
    
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Silicon Carbide Power MOSFET Z-FETTM MOSFET N-Channel Enhancement Mode. Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant

Benefits • Higher System Efficiency • Reduced Cooling Requirements • Increased System Switching Frequency

 
Key AttributesValue
ConfigurationSingle
Voltage1200 V
Current31.6 A
TypeMOSFET
Package TypeTO-247-3
Availability
726
QuantityUnit Price
1 - 99
$16.50
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
CREE, INC.