DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
TGF2021-04-SDT TriQuint
RF Power Transistor
  
DC-4GHz Packaged Power pHEMT. The TGF2021-04-SD is a high performance pseudomorphic High Electron Mobility GaAs Transistor (pHEMT) housed in a low cost SOT89 surface mount package. The device’s ideal operating point for low noise operation is at a drain bias of 5 V and 150 mA. At this bias at 900 MHz when matched into 50 ohms using external components, this device is capable of 16 dB gain, 0.6dB noise figure, and 39.5 dBm output IP3. The combination of high gain, low noise, and excellent linearity makes this an ideal component for use in a 3G or 4G receive chain. Evaluation boards at 900 MHz are available. RoHS and Lead-Free compliant
 
Key AttributesValue
TechnologyGaAs
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency4000 MHz
P1dB0.44 W
P3dB
Gain16 dB
Pout0.56 W
Test signalCW
Efficiency
Supply Voltage5 VDC
Thermal Resistance19 °C/W
Package NameSOT-89
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 24
$8.89
25 - 99
$8.00
100 - 249
$7.20
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
TRIQUINT