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TGF2080 TriQuint
RF Power Transistor
  

800um Discrete GaAs pHEMT. The TriQuint TGF2080 is a discrete 800-Micron pHEMT which operates from DC to 20 GHz. The TGF2080 is designed using TriQuint’s proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. The TGF2080 typically provides 29.5 dBm of output power at P1dB with gain of 11.5 dB and 56% power-added efficiency at 1 dB compression. This performance makes the TGF2080 appropriate for high efficiency applications. The protective overcoat layer with silicon nitride provides a level of environmental robustness and scratch protection. Lead-free and RoHS compliant.

 
Key AttributesValue
TechnologyGaAs
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency20000 MHz
P1dB0.89 W
P3dB
Gain11.5 dB
Pout
Test signalCW
Efficiency56 %
Supply Voltage8 VDC
Thermal Resistance33 °C/W
Package NameDie
Package Type
Availability
76
QuantityUnit Price
1 - 24
$13.56
25 - 99
$11.49
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
TRIQUINT