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0912GN-650V Microsemi
RF Power Transistor
  
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The 0912GN-650V is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 17dB gain, 650 Watts of pulsed RF output power at 128μs pulse width, 10% duty factor across the 960 to 1215 MHz band. The transistor has internal prematch for optimal performance. This hermetically sealed transistor can be used for Broadband Avionics Data Link applications. It utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency960 MHz
Frequency Range : Maximum Frequency1215 MHz
P1dB
Gain18 dB
Pout650 W
Test signalPulsed
Efficiency53 %
Supply Voltage50 VDC
Thermal Resistance0.155 °C/W
Package Name55KR
Package Type
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This product is available in the following countries:
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MICROSEMI