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T1G6001032-SM TriQuint
RF Power Transistor
  
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The TriQuint T1G6001032-SM is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The T1G6001032-SM is constructed with TriQuint's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency6000 MHz
P1dB
P3dB
Gain19 dB
Pout10 W
Test signalPulsed
Efficiency54 %
Supply Voltage32 VDC
Thermal Resistance11.8 °C/W
Package Name5x5 QFN
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 24
$70.00
25 - 99
$61.85
100 - 249
$54.65
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
TRIQUINT