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C2M1000170D Cree, Inc.
Silicon Carbide Power Transistors/Modules
    
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C2M1000170D is ideal for power supplies to 200W operating from DC inputs from 200V to 1000V. This product beats silicon MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system implementation cost.
  • High blocking voltage assure:
    • Safe operation in electrically noisy systems
    • Simpler design: remove snubbers, low part count
  • Avalanche rating for system ruggedness, reliability
  • Reduced thermal design complexity, cost
  • Fast switching system size, weight and cost
 
Key AttributesValue
Voltage1700 V
Current4.9 A
Rds(on)1000 mΩ
ConfigurationSingle SiC MOSFET
Package TypeTO-247-3
Availability
441
QuantityUnit Price
1 - 50
$5.05
51 - 100
$4.99
101+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
CREE, INC.