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C2M0160120D Wolfspeed, A Cree Company
Silicon Carbide Power Transistors/Modules
MFG Part Number: C2M0160120D
  
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The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature RDS(on) of 160mΩ and maximum RDS(on) at 150°C of 290mΩ are ideal for power conversion applications from 5-20kW. This product beats silicon IGBTs and MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system cost. Availability of a lower RDS(on) version of the Gen2 SiC MOSFET line allows customers greater flexibility to optimize the price/performance advantage of our Z-FET devices.
 
Key AttributesValue
Voltage1200 V
Current10 A
Rds(on)160 mΩ
ConfigurationSingle SiC MOSFET
Package TypeTO-247-3
Availability
2917
QuantityUnit Price
1 - 49
$7.49
50 - 99
$7.25
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global (Power Products)
   
WOLFSPEED, A CREE COMPANY