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C2M0160120D Cree, Inc.
Silicon Carbide Power Transistors/Modules
    
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The C2M0160120D supports a nominal 17.7 Amps steady state current and may replace the C2M0080120D, 31.6 Amp MOSFET in lower power applications. The room temperature RDS(on) of 160mΩ and maximum RDS(on) at 150°C of 290mΩ are ideal for power conversion applications from 5-20kW. This product beats silicon IGBTs and MOSFETs on switching efficiency, operating frequency, blocking voltage characteristics and reliability while lowering system cost. Availability of a lower RDS(on) version of the Gen2 SiC MOSFET line allows customers greater flexibility to optimize the price/performance advantage of our Z-FET devices.
 
Key AttributesValue
Voltage1200 V
Current10 A
Rds(on)160 mΩ
ConfigurationSingle SiC MOSFET
Package TypeTO-247-3
Availability
5
QuantityUnit Price
1 - 10
$7.99
11+Get Quote
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This product is available in the following countries:
  • Global
   
CREE, INC.