Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
T1G4020036-FL Qorvo
RF Power Transistor
MFG Part Number: 1110866
Enlarge Photo

The TriQuint T1G4020036-FL is a 240 W Peak (48 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

Key AttributesValue
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency3500 MHz
P1dB79.43 W
P3dB260 W
Gain16.1 dB
Test signalPulsed
Efficiency52 %
Supply Voltage36 VDC
Thermal Resistance0.4 °C/W
Package Name
Package TypeFlanged
Request Quote for Lead Time
QuantityUnit Price
1 - 24
25 - 99
100+Get Quote

This product is available in the following countries:
  • Global
  • Qorvo makes a better world possible by providing innovative RF solutions at...
  • Supplier Storefront