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T1G4020036-FL TriQuint
RF Power Transistor
MFG Part Number: 1110866
    
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The TriQuint T1G4020036-FL is a 240 W Peak (48 W Avg.) (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency3500 MHz
P1dB
P3dB
Gain16.1 dB
Pout260 W
Test signalPulsed
Efficiency52 %
Supply Voltage36 VDC
Thermal Resistance0.4 °C/W
Package Name
Package TypeFlanged
Availability
4
QuantityUnit Price
1 - 24
$656.00
25 - 99
$592.00
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
TRIQUINT