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CHZ015A-QEG/20 United Monolithic Semiconductors
RF Power Transistor
MFG Part Number: CHZ015A-QEG
    
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15W L-Band Driver. GaN HEMT on Sic in SMD leadless package. The CHZ015A-QEG is an input matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. The circuit is well suited for pulsed radar application. The CHZ015A-QEG is proposed on a 0.5um gate length GaN HEMT process. It is based on Quasi MMIC technology. It is supplied in RoHS compliant SMD package

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency1200 MHz
Frequency Range : Maximum Frequency1400 MHz
P1dB
P3dB14.12 W
Gain19.5 dB
Pout
Test signalPulsed
Efficiency55 %
Supply Voltage45 VDC
Thermal Resistance5.5 °C/W
Package Name
Package TypeSMD
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