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CHZ180A-SEB/26 United Monolithic Semiconductors
RF Power Transistor
MFG Part Number: CHZ180A-SEB
    
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180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5um gate length GaN HEMT process. It is based on Quasi-MMIC technology . It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency1200 MHz
Frequency Range : Maximum Frequency1400 MHz
P1dB
P3dB
Gain20 dB
Pout199.5 W
Test signalPulsed
Efficiency52 %
Supply Voltage45 VDC
Thermal Resistance0.75 °C/W
Package Name
Package TypeCeramic Flanged
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 19
$1,239.30
20 - 49
$953.31
50 - 99
$794.43
100+Get Quote
Quantity:


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