180W L-Band HPA. GaN HEMT on SiC in SEB Package. The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in L-band. It is well suited for pulsed radar application. The CHZ180A-SEB is proposed on a 0.5um gate length GaN HEMT process. It is based on Quasi-MMIC technology . It is available in a hermetic flange ceramic metal power package providing low parasitic and low thermal resistance.