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CAS300M12BM2 Cree, Inc.
Silicon Carbide Power Transistors/Modules
    
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1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module

Module Features
  • Ultra Low Loss
  • High-Frequency Operation
  • Zero Reverse Recovery Current from Diode
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, fail-safe device operation
  • Ease of paralleling
  • Copper baseplate and aluminum nitride insulator
System Benefits
  • Enables compact and lightweight systems
  • High efficiency operation
  • Mitigates over-voltage protection
  • Reduces thermal requirements
  • Enables simplified topologies
Applications
  • Induction Heating
  • Motor Drives
  • Solar and Wind Inverters
  • UPS and SMPS
  • Traction
 
Key AttributesValue
Voltage1200 V
Current300 A
Rds(on)4.2 mΩ
ConfigurationHalf-bridge/SiC MOSFET/SiC diode
Package Type62x106
Availability
31
QuantityUnit Price
1 - 50
$561.00
51+Get Quote
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This product is available in the following countries:
  • Global
   
CREE, INC.