DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
A2G26H281-04SR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: A2G26H281-04SR3
  
Enlarge Photo

This 50 W asymmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 2496 to 2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 2496 to 2690 MHz band. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

 
Key AttributesValue
TechnologyGaN
Frequency Range : Minimum Frequency2496 MHz
Frequency Range : Maximum Frequency2690 MHz
P1dB
P3dB251 W
Gain14.4 dB
Pout50 W
Test signalW-CDMA
Efficiency58 %
Supply Voltage48 VDC
Thermal Resistance1.77 °C/W
Package NameNI-780S-4L
Package Type
Availability
236
QuantityUnit Price
1 - 9
$172.64
10 - 24
$167.71
25+$163.05
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS