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GS-010-120-1-P- GaN Systems
GaN Power Transistor
MFG Part Number: GS-010-120-1-P-E01-MR
  
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100V Enhancement Mode GaN Transistor

The GS-010-120-1-P is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance & yield. GaNPX® packaging enables low inductance & low thermal resistance in a small package. The GS-010-120-1-P is a bottom-side cooled transistor that offers very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.

  • Ultra-low FOM Island Technology® die
  • Low inductance GaNPX® package
  • Easy gate drive requirements
  • Transient tolerant gate drive (-20V to +7V)
  • Very high switching frequency (> 10 MHz)
  • Fast and controllable fall and rise times
  • Reverse current capability
  • Zero reverse recovery loss
  • Small 7.6 x 4.6 mm2 PCB footprint
  • Dual gate pads for optimal board layout
  • RoHS 6 compliant
Target Applications
  • 48V Automotive
  • High efficiency power conversion
  • High density power conversion
  • Energy Storage Systems
  • AC-DC Converters (secondary side)
  • ZVS Phase Shifted Full Bridge
  • Half Bridge topologies
  • Synchronous Buck or Boost
  • Uninterruptable Power Supplies
  • Industrial Motor Drives
  • Fast Battery Charging
  • Class D Audio amplifiers
  • Traction Drive
 
Key AttributesValue
Voltage100 V
Current120 A
Rds(on)5 mΩ
Package Type
Dimensions (mm)7.6 mm x 4.6 mm x 0.54 mm
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$11.73
10 - 24
$10.38
25 - 249
$9.56
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global (except Israel)
   
GAN SYSTEMS
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