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SD56120M STMicroelectronics
RF Power Transistor
MFG Part Number: SD56120M
    
The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency
Frequency Range : Maximum Frequency
P1dB
P3dB
Gain13 dB
Pout120 W
Test signalCW
Efficiency50 %
Supply Voltage32 VDC
Thermal Resistance0.55 °C/W
Package NameM252
Package Type
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This product is available in the following countries:
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STMICROELECTRONICS