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NE5510279A Renesas
RF Power Transistor
MFG Part Number: NE5510279A

The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 33.0 dBm output power with 47% power added efficiency at 1.8 GHz under the 4.8 V supply voltage.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency900 MHz
Frequency Range : Maximum Frequency1800 MHz
P1dB
P3dB
Gain10 dB
Pout2 W
Test signalPulsed
Efficiency47 %
Supply Voltage4.8 VDC
Thermal Resistance5 °C/W
Package Name79A
Package Type
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This product is available in the following countries:
  • Europe

   
RENESAS