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CHA2190-99F/00 United Monolithic Semiconductors
mmW LNA
  
The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
 
Key AttributesValue
TechnologyMMIC
Frequency Range : Minimum Frequency20000 MHz
Frequency Range : Maximum Frequency30000 MHz
Gain15 dB
Gain Flatness±0.5 dB
Noise Figure2.2 dB
P1dB11 dBm
Output IP320 dBm
Package TypeChip
Availability
146
QuantityUnit Price
1 - 99
$30.54
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
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