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MDS1100 Microsemi
RF Power Transistor
MFG Part Number: MDS1100
  
The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metallization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life.
 
Key AttributesValue
TechnologyBipolar/HBT
Frequency Range : Minimum Frequency
Frequency Range : Maximum Frequency
P1dB
P3dB
Gain8.9 dB
Pout1000 W
Test signalCW
Efficiency45 %
Supply Voltage50 VDC
Thermal Resistance0.02 °C/W
Package Name55TU
Package Type
Availability
1
QuantityUnit Price
1 - 49
$704.60
50+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
MICROSEMI