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NEM090853P-28 Renesas
RF Power Transistor
MFG Part Number: NEM090853P-28

The NEM090853P-28 is an N-channel enhancement-mode lateral MOS FET designed for 0.8 to 1.0 GHz, 90 W single-end power amplifier applications, such as, GSM/EDGE/N-CDMA cellular base station. Dies are manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and triple layer aluminum silicon metalization offer a high degree of reliability.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency800 MHz
Frequency Range : Maximum Frequency1000 MHz
P1dB90 W
P3dB
Gain19.5 dB
Pout19.95 W
Test signalCW
Efficiency57 %
Supply Voltage28 VDC
Thermal Resistance0.7 °C/W
Package NameT-97M
Package Type
Availability
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This product is available in the following countries:
  • Europe

   
RENESAS