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EC2612-99F/00 United Monolithic Semiconductors
RF Small Signal Transistor pHEMT
  
The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminum gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very high frequency and low noise performances. It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required.
 
Key AttributesValue
Frequency Range : Minimum Frequency18000 MHz
Frequency Range : Maximum Frequency40000 MHz
Gain12 dB
Noise Figure1.5 dB
P1dB
Output IP3
Vd (Device Voltage)3.5 VDC
Idss40 mA
Thermal Resistance
Package TypeChip
Availability
747
QuantityUnit Price
1 - 99
$17.86
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
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