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NEM090603M-28 Renesas
RF Power Transistor
MFG Part Number: NEM090603M-28

The NEM090603M-28 is an N-channel enhancement-mode lateral diffused MOS FET designed for driver or final stage in 0.8 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/EDGE/D-AMPS/PDC cellular base station amplifiers. Dies are manufactured using our NEWMOS technology (our WSi gate lateral MOS FET), and its nitride surface passivation and triple layer aluminum silicon metallization offer a high degree of reliability.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency800 MHz
Frequency Range : Maximum Frequency1000 MHz
P1dB75 W
P3dB
Gain17.5 dB
Pout31.6 W
Test signalCW
Efficiency54 %
Supply Voltage28 VDC
Thermal Resistance1.2 °C/W
Package Name3M
Package Type
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This product is available in the following countries:
  • Europe

   
RENESAS