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NE5500479A-A Renesas
RF Power Transistor
MFG Part Number: NE5500479A-A
  

The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 31.5 dBm output power with 62% power added efficiency at 900 MHz as AMPS final output stage amplifier under the 3.5 V supply voltage. It also can deliver 35 dBm output power with 62% power added efficiency at 4.8 V, as GSM 900 class 4 final stage amplifiers.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency800 MHz
Frequency Range : Maximum Frequency1000 MHz
P1dB
P3dB
Gain15 dB
Pout1 W
Test signalCW
Efficiency62 %
Supply Voltage4.8 VDC
Thermal Resistance10 °C/W
Package Name79A
Package Type
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This product is available in the following countries:
  • Europe

   
RENESAS