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MRF6S19140HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6S19140HSR3
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1930 MHz
Frequency Range : Maximum Frequency1990 MHz
P1dB140 W
P3dB
Gain16 dB
Pout3 W
Test signalCDMA
Efficiency27.5 %
Supply Voltage28 VDC
Thermal Resistance0.33 °C/W
Package NameNI-880
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NXP SEMICONDUCTORS