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MRF5S19060NR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF5S19060NR1
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 Volt base station equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1930 MHz
Frequency Range : Maximum Frequency1990 MHz
P1dB60 W
P3dB
Gain14 dB
Pout12 W
Test signalCDMA
Efficiency23 %
Supply Voltage28 VDC
Thermal Resistance0.8 °C/W
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NXP SEMICONDUCTORS