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APT20GN60BDQ1G Microsemi
Power IGBT Transistor
  
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
 
Key AttributesValue
ConfigurationIGBT + Diode
Voltage600 V
Current40 A
Package TypeTO-247
Availability
Request Quote for Lead Time
QuantityUnit Price
60 - 99
$2.43
100 - 249
$2.34
250 - 499
$2.28
500 - 999
$2.23
1000 - 4999
$2.17
5000+$2.03
Quantity:


This product is available in the following countries:
  • Global
   
MICROSEMI