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APT35GN120BG Microsemi
Power IGBT Transistor
MFG Part Number: APT35GN120BG
  
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
 
Key AttributesValue
ConfigurationSingle
Voltage1200 V
Current94 A
Package TypeTO-247
Availability
5000
Manufacturer Stock
1032
QuantityUnit Price
1 - 49
$5.95
50 - 99
$5.71
100 - 249
$5.49
250 - 499
$5.36
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
MICROSEMI